发明名称 Apparatus for Forming Thin Film
摘要 A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace of an MOCVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate-side surface of the shower head.
申请公布号 US2008134976(A1) 申请公布日期 2008.06.12
申请号 US20080030054 申请日期 2008.02.12
申请人 TOKYO ELECTRON LIMITED;NEC CORPORATION 发明人 SHINRIKI HIROSHI;MATSUMOTO KENJI;TATSUMI TORU
分类号 C23C16/40;C23C16/54;C23C16/44;C23C16/452;C23C16/455;C30B25/14;H01L21/205;H01L21/31;H01L21/314;H01L21/316 主分类号 C23C16/40
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