发明名称 |
Apparatus for Forming Thin Film |
摘要 |
A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace of an MOCVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate-side surface of the shower head.
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申请公布号 |
US2008134976(A1) |
申请公布日期 |
2008.06.12 |
申请号 |
US20080030054 |
申请日期 |
2008.02.12 |
申请人 |
TOKYO ELECTRON LIMITED;NEC CORPORATION |
发明人 |
SHINRIKI HIROSHI;MATSUMOTO KENJI;TATSUMI TORU |
分类号 |
C23C16/40;C23C16/54;C23C16/44;C23C16/452;C23C16/455;C30B25/14;H01L21/205;H01L21/31;H01L21/314;H01L21/316 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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