发明名称 |
METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR AND DISPLAY APPARATUS |
摘要 |
<p>A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode.</p> |
申请公布号 |
WO2008069255(A1) |
申请公布日期 |
2008.06.12 |
申请号 |
WO2007JP73529 |
申请日期 |
2007.11.29 |
申请人 |
CANON KABUSHIKI KAISHA;OMURA, HIDEYUKI;HAYASHI, RYO;KAJI, NOBUYUKI;YABUTA, HISATO |
发明人 |
OMURA, HIDEYUKI;HAYASHI, RYO;KAJI, NOBUYUKI;YABUTA, HISATO |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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