| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a test method of a semiconductor device, which has high detection sensitivity of a defective cell that will be actualized due to deterioration of a threshold, such as defective SNM. <P>SOLUTION: In this test method of the semiconductor device, a drain is connected to a storage node in SRAM, and a functional test is performed for applying a potential lower than a GND potential to a back gate of an n-type MOS transistor of which the GND potential is connected to the source, and for reading out data. Next, the functional test is performed for applying the potential higher than the GND potential to the back gate and for reading out the data. <P>COPYRIGHT: (C)2008,JPO&INPIT |
