发明名称 GRINDING METHOD FOR SILICON CARBIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a grinding method for silicon carbide single crystal for easily and efficiently cutting out silicon carbide single crystal having no breakage such as crack. SOLUTION: This grinding method comprises a process for bringing a grindstone working part 32 of a grinding wheel 30 into contact with a growth face opposing to a seed crystal 11 side of the silicon carbide single crystal 10 formed by the sublimation method, and a process for grinding the silicon carbide single crystal 10 by rotating the grinding wheel 30 and lowering the grinding wheel 30 in the direction of seed crystal 11. Ultrasonic vibration is given to the hollow cylindrical grinding wheel 30 or a fixed device 21 to discharge facet pieces of the silicon carbide single crystal 10 in the process for grinding the silicon carbide single crystal 10. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008132559(A) 申请公布日期 2008.06.12
申请号 JP20060319791 申请日期 2006.11.28
申请人 BRIDGESTONE CORP 发明人 NAKAMURA MASAO;NITTA ERUMU
分类号 B24B1/00;B24B1/04;C30B29/36;C30B33/00;H01L21/203 主分类号 B24B1/00
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