发明名称 |
Amorphous Si/Au eutectic wafer bonding structure |
摘要 |
An amorphous Si (silicon)/Au (gold) eutectic wafer bonding structure is fabricated. An amorphous Si obtained through coating or growth contacts with Au for bonding. The bonding layer is a Si/Au eutectic layer. Si is prevented from being precipitated. The bonding structure has a fast reaction ratio and a uniformed reaction. Thus, an electrical device has an improved electricity and reliability.
|
申请公布号 |
US2008138965(A1) |
申请公布日期 |
2008.06.12 |
申请号 |
US20070649892 |
申请日期 |
2007.01.05 |
申请人 |
NATIONAL CENTRAL UNIVERSITY |
发明人 |
LIU CHENG-YI;CHAN PO-HAN;LIN CHING-LIANG |
分类号 |
H01L21/36 |
主分类号 |
H01L21/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|