A STACKED SILICON-GERMANIUM NANOWIRE STRUCTURE AND A METHOD OF FORMING THE SAME
摘要
A method of forming a stacked silicon-germanium nanowire structure on a support substrate is disclosed. The method includes forming a stacked structure on the support substrate, the stacked structure comprising at least one channel layer and at least one interchannel layer deposited on the channel layer; forming a fin structure from the stacked structure, the fin structure comprising at least two supporting portions and a fin portion arranged there between; oxidizing the fin portion of the fin structure thereby forming the silicon-germanium nanowire being surrounded by a layer of oxide; and removing the layer of oxide to form the silicon-germanium nanowire. A method of forming a gate-all-around transistor comprising forming a stacked silicon-germanium nanowire structure that has been formed on a support substrate is also disclosed. A stacked silicon-germanium nanowire structure and a gate-all-around transistor comprising the stacked silicon-germanium nanowire structure are also disclosed.
申请公布号
WO2008069765(A1)
申请公布日期
2008.06.12
申请号
WO2007SG00423
申请日期
2007.12.07
申请人
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;LO, GUO QIANG;BERA, LAKSHMI KANTA;NGUYEN, HOAI SON;SINGH, NAVAB