MAGNETIC RANDOM ACCESS MEMORY, AND ITS MANUFACTURING METHOD

摘要

Provided is an MRAM comprising a pin layer (60) and a magnetic recording layer (40) connected through a tunnel barrier layer (50) with the pin layer (60). The magnetic recording layer (40) includes a first free layer (10), a second free layer (30) for contacting the tunnel barrier layer (50), and an intermediate layer (20) interposed between the first free layer (10) and the second free layer (30). The first free layer (10) includes a magnetization inverting region (13), a first magnetization fixing region (11) and a second magnetization fixing region (12). The magnetization inverting region (13) has an invertible magnetization and overlaps the second free layer (30). The first magnetization fixing region (11) is connected with a first boundary (B1) of the magnetization inverting region (13) and has its magnetization direction fixed in a first direction. On the other hand, the second magnetization fixing region (12) is connected with a secondary boundary (B2) of the magnetization inverting region (13) and has its magnetization direction fixed in a second direction. Both the first direction and the second direction are directed toward the magnetization inverting region (13) or away from the magnetization inverting region (13). The intermediate layer (20) is so formed as to cover at least the magnetization inverting region (13). This magnetization inverting region (13) and the second free layer (30) are magnetically coupled through the intermediate layer (20).