NON-VOLATILE MEMORY ELEMENT HAVING CHARGE TRAP LAYERS AND METHOD OF FABRICATING THE SAME

摘要

A nonvolatile memory device including plural charge trap layers and a manufacturing method thereof are provided to extend a retention time of a memory even though a small defect is produced on a charge trap layer. A nonvolatile memory device includes a tunnel insulating layer(120), a charge trap layer(130), a blocking insulating layer(140) and a gate electrode(150) which are sequentially deposited on a semiconductor substrate(110). The charge trap layer has a first trap layer(131) made of nano-crystal, and a second trap layer(132) formed on the first trap layer and made of nano-crystal having a diameter larger than that of the first trap layer. The first trap layer and the second trap layer are made of any one selected from the group consisting of GaN, AlxGa(1-x)N and AlxInyGa(1-x-y)N.