发明名称 |
MANUFACTURING METHOD OF BAW RESONATOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a BAW (Bulk Acoustic Wave) resonator improving a Q value, and bonding strength between a piezoelectric material portion and a bottom electrode. <P>SOLUTION: The method for manufacturing a BAW resonator comprises steps of: bonding metal layer formation process for forming a bonding metal layer 31 on a surface of a PZT base piece 30 in the thickness direction; bonding the bonding metal layer 31 with a lower electrode 2 laminated on a surface of a base substrate 1; and forming an upper electrode 4 on the other surface of the PZT base piece 30 in the thickness direction. When laminating the lower electrode 2 on the surface of the base substrate 1, an upper metal layer 21 as an upper layer in the lower electrode 2 is laminated on a lower metal layer 22, after the lower metal layer 22 as a lower layer in the lower electrode 2 is laminated on the surface of the base substrate 1. Metal having density lower than the upper metal layer 21 is used as material of the lower metal layer 22. Metal having bonding property with the bonding metal layer 31 higher than the lower metal layer 22 is used as material of the upper metal layer 21. <P>COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2008135886(A) |
申请公布日期 |
2008.06.12 |
申请号 |
JP20060319333 |
申请日期 |
2006.11.27 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
YAMAUCHI NORIHIRO;SI-BEI XIONG;YOSHIHARA TAKAAKI;SHIRAI TAKEO;MATSUSHIMA CHOMEI;HAYAZAKI YOSHIKI |
分类号 |
H03H3/02;H01L41/09;H01L41/187;H01L41/22;H01L41/29;H01L41/313;H01L41/316;H01L41/338;H03H9/17 |
主分类号 |
H03H3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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