COMPOUND SEMICONDUCTOR SUBSTRATE GROWN ON METAL LAYER, METHOD FOR MANUFACTURING THE SAME, AND COMPOUND SEMICONDUCTOR DEVICE USING THE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide: a method for manufacturing the compound semiconductor substrate, by which a compound semiconductor substrate in which a compound semiconductor layer is grown on a metal layer can be manufactured easily at a low cost; the compound semiconductor substrate manufactured by the same; and an element using the substrate.

SOLUTION: The method for manufacturing the compound semiconductor substrate includes steps of:(a) preparing a plurality of spherical balls; (b) coating the plurality of spherical balls on a substrate; (c) depositing a metal layer on the substrate coated with the spherical balls with a thickness smaller than the diameter of the spherical balls; (d) removing the plurality of spherical balls from the substrate having the metal layer deposited thereon; (e) growing a compound semiconductor layer from a surface of the substrate exposed by removing the plurality of spherical balls; (f) growing the compound semiconductor layer in a lateral direction to form a continuous compound semiconductor layer on the metal layer; and (g) growing the compound semiconductor layer to a target thickness.

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