| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a p-type amorphous silicon thin film which enhances photoconductivity against a boron density in the thin film. <P>SOLUTION: The p-type amorphous silicon thin film can be formed by a catalytic CVD method. A boron density in the thin film is 7×10<SP>20</SP>to 2×10<SP>21</SP>atoms/cm<SP>-3</SP>, and the photoconductivity of the thin film is 8×10<SP>-5</SP>to 2×10<SP>-3</SP>S/cm. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
