SILICON WAFER AND ITS PRODUCING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a single crystal silicon wafer having excellent intrinsic getterability.

SOLUTION: The silicon wafer which is of a point defect type in which crystal lattice vacancy is dominant in the whole volume of the silicon wafer is rotationally symmetric about its axis and has a region having a width of at least 80% of the radius of the silicon wafer. The region includes the agglomerate of the crystal lattice vacancy having a largeness of at least 30 nm and a maximum density of 6×103cm-3and the agglomerate of the crystal lattice vacancy having a largeness of 10-30 nm and a density of 1×105to 3×107cm-3. An OSF seed having a density of 0-10 cm-2is contained in the silicon wafer. Average BMD density in the inside of the OSF seed is 5×108to 5×109cm-3.

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