| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical-mechanical polishing slurry composition, capable of polishing protruding part at a polishing speed higher than that for a recessed part, acting as a polishing stopper layer, on a surface of a semiconductor, having a level difference so that self stoppage in the polishing process is made possible in a polishing process for the semiconductor, requiring high planarity, and surface defects, after polishing process, is decreased so as to acquire superior polishing planarity and dispersion stability. SOLUTION: This slurry composition contains deionized water, abrasive particles, consisting of a metal oxide, a pH adjuster and a surface-active agent, wherein the surface-active agent contains two or more ion parts and two or more lipophilic groups. This slurry precursor composition contains deionized water, the pH adjuster and the surface-active agent, wherein the surface-active agent contains two or more ion parts and two or more lipophilic groups. COPYRIGHT: (C)2008,JPO&INPIT |
