发明名称 Method for Making a Keyhole Opening during the Manufacture of a Memory Cell
摘要 A keyhole opening is formed during one example of manufacturing a memory cell. An upper layer is formed on a base layer, the base layer having a bottom electrode. The upper layer includes a second layer formed over the base layer and a first layer formed over the second layer. A keyhole opening is formed through the upper layer to expose a surface of the bottom electrode and to create a first memory cell subassembly. The keyhole opening comprises a first, upper opening segment formed within the first layer and a second opening segment formed within the second layer, the first and second opening segments having first and second widths. The first layer has an overhanging portion extending into the opening so that the first width is shorter than the second width.
申请公布号 US2008138930(A1) 申请公布日期 2008.06.12
申请号 US20060567314 申请日期 2006.12.06
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 LUNG HSIANG LAN
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
主权项
地址