发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICES |
摘要 |
A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.
|
申请公布号 |
US2008135923(A1) |
申请公布日期 |
2008.06.12 |
申请号 |
US20080031096 |
申请日期 |
2008.02.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-HYUN;CHOI JUNG-DAL;YE BYOUNG-WOO |
分类号 |
H01L27/115;H01L21/28;H01L21/336;H01L21/8247;H01L29/423;H01L29/51;H01L29/792 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|