| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of simplifying pattern formation. <P>SOLUTION: A first pattern 105 is formed on a film 100 to be processed. A reflection preventing film 106 and a resist film 107 are successively formed on the film 100 to be processed including a region with the first pattern 105 formed thereon. A resist pattern 103 is formed by processing the resist film 107. The reflection preventing film 106 exposed beneath the resist pattern 108 is processed with a development liquid being the same as that used for processing the resist film 107, thereby exposing a part of the film 100 to be processed and at least a part of the first pattern 105. The film 100 to be processed is processed with the first pattern 105 and the resist pattern 108 as masks, so that a wiring pattern 110, etc., is formed on the film 100 to be processed. <P>COPYRIGHT: (C)2008,JPO&INPIT |
