| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor-device manufacturing method for forming an ohmic electrode on the rear face of an SiC substrate, particularly, on an (a) face by a low-temperature process. SOLUTION: A device structure and a surface electrode are formed on the surface side of an n+ type substrate 1 while using a rear face of the substrate 1, particularly making the rear face 1b as an (a) face of SiC. After that, the rear face 1b of the substrate 1 is polished so as to form minute unevenness on the rear face 1b. Then, a metal thin-film 110 is formed on the rear face 1b, formed with the unevenness, of the substrate 1. A laser beam is emitted to the rear-face 1b side of the substrate 1 so as to form a drain electrode 11. COPYRIGHT: (C)2008,JPO&INPIT
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