| 摘要 |
Provided are a method of fabricating a semiconductor and an apparatus using the method, and more particularly, a method of effectively arranging assist features on the mask and an apparatus using the method. The method of arranging mask patterns includes separately calculating contributions of an assist feature to image intensity at an optimal focus and at a defocus position and placing the assist feature at a position where the contribution of the assist feature to the image intensity is greater at the defocus position than at the optimal focus position. The method includes a first operation of obtaining a first contribution function for contribution of an assist feature to image intensity at a main feature at a first focus position; a second operation of obtaining a second contribution function for contribution of the assist feature to the image intensity at the main feature at a second focus position; and a third operation of determining the position of the assist feature to be a position satisfying a condition that a linear combination of the first contribution function and the second contribution function exceeds a predetermined threshold value.
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