| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing composition that is more suitable for the purpose of polishing wafers containing tungsten, and to provide a polishing method that uses the polishing composition. SOLUTION: The polishing composite contains colloidal silica and hydrogen peroxide. The polishing composition has a pH range of 1-4, and iron ion concentration in the polishing composition is 0.02 ppm or lower. Preferably, the polishing composition further contains phosphoric acid or phosphates. COPYRIGHT: (C)2008,JPO&INPIT |
