| 摘要 |
A solid-state imaging device is provided and includes a photoelectric conversion unit and a charge transfer unit including charge transfer electrodes for transferring charges generated in the photoelectric conversion unit. Each of the charge transfer electrodes includes a first electrode of a first layer conductive film and a second electrode of a second layer conductive film, which are alternately arranged. The upper edge of the first electrode is protected by a canopy-shaped upper insulating film to ensure a distance between the first and second electrodes. In addition, the first and second electrodes are insulated from each other by an inter-electrode insulating film of a side wall insulating film formed by CVD so as to cover the side wall of the first electrode.
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