MASK LAYER TRIM METHOD USING CHARGED PARTICLE BEAM EXPOSURE

摘要

A method for forming a patterned target layer over a substrate uses a blanket target layer located over the substrate and a patterned mask layer located over the blanket target layer At least one mask layer pattern wit the patterned mask layer is treated with a charged particle beam to provide a dimensionally changed mask layer pattern within a dimensionally changed mask. The dimensionally changed mask is used as an etch mask when etching the blanket target layer to form the patterned target layer.