Method for forming a device with integrated circuits, involves lining of opening in electrically insulated layer with metal layer, where metal layer is nitrated with higher concentration of nitrogen related to part of metal layer

摘要

The method involves lining of an opening in an electrically insulated layer with a metal layer. A part of a metal layer is selectively converted, which extends in the proximity of an upper sidewall of the opening. A metal layer is nitrated with a higher concentration of nitrogen related to a part of a metal layer, which extends in the proximity of the lower sidewall of the opening. Another metal nitrate layer is formed on the former nitrated metal layer. An electrically conducting layer is separated on a part of the latter metal nitride layer, in order to fill the opening. The electrically conducting layer is planished for a sufficient period for releasing the former electrically insulated layer and for defining an electrically conducting sample in the opening, which is spaced by the latter nitrate layer. The former nitrate metal layer is spaced from the former electrically insulated layer. The metal is selectively deposited from the group consists of tungsten, copper and aluminum, comprises under the use of a chemical vapor phase deposition technique. An independent claim is also included for a device with integrated circuits.