| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for improving the surface of a semiconductor substrate which is at least partially made of silicon and capable of completely repairing defects present in or on the semiconductor substrate so as to obtain a semiconductor substrate having high surface quality. SOLUTION: A method of the type described above includes a deposition step including selective epitaxial deposition in at least one hole formed on the surface of the semiconductor substrate. COPYRIGHT: (C)2008,JPO&INPIT
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