发明名称 METHOD OF CHARGED PARTICLE BEAM DRAWING, AND METHOD FOR RESIZING DIMENSIONAL CHANGE ACCOMPANYING LOADING EFFECT
摘要 PROBLEM TO BE SOLVED: To provide a means to determine an exposure dose to correct changes in a line width dimension (critical dimension) after drawing a mask. SOLUTION: The method of charged particle beam drawing in one embodiment of the present invention includes: a step S102 of inputting pattern data; a step S104 of predicting the total drawing time for drawing the pattern data; a step S108 of acquiring a reference exposure dose after an optional time by using the relation among time periods after the start time of drawing, the total drawing time and reference exposure doses; the step S108 of acquiring a fog effect correction coefficient after an optional time by using the relation among time periods after the start time of drawing, the total drawing time and fogging effect correction coefficients; a step S110 of calculating an exposure dose after the optional time; and a step S114 of drawing in accordance with the exposure dose. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008134500(A) 申请公布日期 2008.06.12
申请号 JP20060321246 申请日期 2006.11.29
申请人 NUFLARE TECHNOLOGY INC 发明人 ABE TAKAYUKI;SUZUKI JUNICHI;IIJIMA TOMOHIRO;TSURUMAKI HIDEYUKI
分类号 G03F7/20;H01L21/027 主分类号 G03F7/20
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