发明名称 |
Stacked silicon-germanium nanowire structure and method of forming the same |
摘要 |
A method of forming a stacked silicon-germanium nanowire structure on a support substrate is disclosed. The method includes forming a stacked structure on the support substrate, the stacked structure comprising at least one channel layer and at least one interchannel layer deposited on the channel layer; forming a fin structure from the stacked structure, the fin structure comprising at least two supporting portions and a fin portion arranged there between; oxidizing the fin portion of the fin structure thereby forming the silicon-germanium nanowire being surrounded by a layer of oxide; and removing the layer of oxide to form the silicon-germanium nanowire. A method of forming a gate-all-around transistor comprising forming a stacked silicon-germanium nanowire structure that has been formed on a support substrate is also disclosed. A stacked silicon-germanium nanowire structure and a gate-all-around transistor comprising the stacked silicon-germanium nanowire structure are also disclosed.
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申请公布号 |
US2008135949(A1) |
申请公布日期 |
2008.06.12 |
申请号 |
US20060636381 |
申请日期 |
2006.12.08 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
发明人 |
LO GUO QIANG;BERA LAKSHMI KANTA;NGUYEN HOAI SON;SINGH NAVAB |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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