发明名称 |
Phase Change Memory Cell with Thermal Barrier and Method for Fabricating the Same |
摘要 |
A memory cell has thermal isolation material between a bottom electrode and a plug contact to confine heat in a memory element during programming and reset operations. In a particular embodiment, the memory element is a chalcogenide, such as GST. An electrically conductive barrier layer deposited over the contact and on sidewalls of a recess formed over the contact electrically couples the bottom electrode to the contact.
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申请公布号 |
US2008137400(A1) |
申请公布日期 |
2008.06.12 |
申请号 |
US20060567361 |
申请日期 |
2006.12.06 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN SHIH HUNG;LUNG HSIANG LAN;CHEN YI-CHOU |
分类号 |
G11C11/00;H01L21/02 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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