SEMICONDUCTOR DEVICE HAVING MULTI-BIT NONVOLATILE MEMORY CELL AND METHODS OF FABRICATING THE SAME

摘要

A semiconductor device having a multi-bit nonvolatile memory cell is provided. The semiconductor device comprises a multi-bit nonvolatile memory unit cell sharing a source and a drain region and having a plurality of transistors. The plurality of transistors each comprise at least one control gate and at least one charge storage region. The charge storage regions are for accumulating charges within each of the plurality of transistors of the memory unit cell. Each of the control gatesare connected to at least one control voltage to shift a threshold voltage in each of the plurality of transistors for storing multi-bit per unit cell.