Semiconductor device, manufacturing method thereof, and SRAM cell

摘要

An SRAM cell includes a semiconductor substrate; a first transistor formed in a main plane of the semiconductor substrate; a second transistor formed in the main plane of the semiconductor substrate; and a first wiring layer connecting a gate electrode of the first transistor with a diffusion region of the second transistor inside a first hole and formed to be spaced from the main plane of the semiconductor substrate inside the first hole.