发明名称 |
SEMICONDUCTOR DEVICE HAVING NANO-PILLARS AND METHOD THEREFOR |
摘要 |
<p>A semiconductor device (10) includes a plurality of pillars (22) formed from a conductive material (16). The pillars are formed by using a plurality of nanocrystals (20) as a hardmask for patterning the conductive material (16). A thickness of the conductive material determines the height of the pillars. Likewise, a width of the pillar is determined by the diameter of a nanocrystal (20). In one embodiment, the pillars (22) are formed from polysilicon and function as the charge storage region of a non-volatile memory cell (25) having good charge retention and low voltage operation. In another embodiment, the pillars are formed from a metal and function as a plate electrode for a metal-insulator-metal (MIM) capacitor (50) having an increased capacitance without increasing the surface area of an integrated circuit.</p> |
申请公布号 |
KR20080053351(A) |
申请公布日期 |
2008.06.12 |
申请号 |
KR20087008172 |
申请日期 |
2006.09.20 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MATHEW LEO;RAO RAJESH A.;MURALIDHAR RAMACHANDRAN |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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