发明名称 INFORMATION STORAGE DEVICE USING MAGNETIC DOMAIN WALL MOVING
摘要 An information storage device using magnetic domain wall movement is provided to connect a plurality of vertical magnetic layers with at least one horizontal magnetic layer to obtain high recording density, and to perform read/write operation while moving the magnetic domain wall so that a moving mechanism needs not. An information storage device using magnetic domain wall movement comprises a data recording magnetic layer(100), first and second heads(200,300), and transistors. The data recording magnetic layer includes horizontal magnetic layers(50a) and a plurality of vertical magnetic layers(50b). The first head includes first and second ferromagnetic layers formed on the upper and lower surfaces of the horizontal magnetic layers, and an insulating layer placed between the first and second ferromagnetic layers. The transistors, connected with each vertical magnetic layer, apply current to move a magnetic domain wall(15).
申请公布号 KR20080053101(A) 申请公布日期 2008.06.12
申请号 KR20060125074 申请日期 2006.12.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SUNG CHUL;CHOA, SUNG HOON;LIM CHEE KHENG
分类号 G11B5/02;G11B5/00;G11B5/012 主分类号 G11B5/02
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