| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a charge-coupled device where a deterioration of device characteristics due to a variation in a pinch-off voltage difference during dry etching or damage to a semiconductor substrate is eliminated and a distance between charge transfer electrodes is downsized and to provide its manufacturing method. <P>SOLUTION: When a storage gate Schottky electrode is formed, Ti serving as an electrode metal film is injected into an upper semiconductor layer formed of an InGaP layer or an InAlGaP layer. Penetration of Ti can be stopped almost at a GaAs layer just under an upper semiconductor. On the other hand, the virtual gate Schottky electrode is formed in such a manner that an electrode metal film is evaporated on the exposed AlGaAs layer from a prescribed direction after the upper semiconductor layer and the GaAs layer are partially, selectively removed. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
