| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon-carbide semiconductor device which excels in such a property as its low ON-resistance, by improving the carrier mobility in its channel. SOLUTION: The manufacturing method of the silicon-carbide semiconductor device includes a process wherein for the semiconductor laminating substrate including a first conductivity-type silicon-carbide crystal substrate, a first conductivity-type silicon-carbide crystal layer, a second conductivity-type silicon-carbide crystal layer, and a first conductivity-type semiconductor region, a groove so piercing the first conductivity-type semiconductor region and the second conductivity-type crystal layer as to have as its bottom surface the first conductivity-type silicon-carbide crystal layer is formed, and includes a process for forming a silicon film in at least a portion of the groove, and also, includes a process for heating up to a temperature not lower than the melting point of the silicon film the semiconductor laminating substrate having the formed silicon film, and further, includes a process for removing the silicon film after heating it, and moreover, includes a process for forming a gate insulating film on the exposed surface wherefrom the silicon film has been removed, and furthermore, includes a process for forming a gate-electrode layer on the surface of the gate insulating film. COPYRIGHT: (C)2008,JPO&INPIT
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