| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a ferroelectric memory device capable of further uniformizing the crystal orientation of the ferroelectric layer. SOLUTION: The manufacturing method of the ferroelectric memory device is provided with a lower electrode forming process for forming a lower electrode 12 due to the reaction of organic metal material; a first ferroelectric layer forming process for forming the first ferroelectric layer 33 on the lower electrode 12; and a second ferroelectric layer forming process for forming a second ferroelectric layer 34 on the first ferroelectric layer 33 due to the reaction of organic metal material gas and oxygen gas. In this case, the amount of oxygen gas in the first ferroelectric layer forming process is smaller than the amount of oxygen necessary for making the organic metal material gas react, while the amount of oxygen gas in the second ferroelectric layer forming process is larger than the amount of oxygen necessary for making the organic metal material gas react, and the lower electrode forming process comprises an electrode oxide film forming process for the film formation of the electrode oxide film 32, constituted of the oxide of the constituting material of the lower electrode 12, on the lower electrode 12. COPYRIGHT: (C)2008,JPO&INPIT
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