发明名称 CHARGED PARTICLE BEAM DEVICE, SCANNING ELECTRON MICROSCOPE, AND TESTPIECE OBSERVATION METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a charged particle beam device which conducts an inspection at high speed with high sensitivity by acquiring an observation image of high resolution and high contrast through efficiently detecting a secondary signal without increasing aberration of a primary electron beam, and by detecting defects from the observation image. SOLUTION: After scanning a desired region of a testpiece by a primary charged particle beam and colliding secondary charged particles secondarily generated from the region by irradiation of the primary charged particle beam with secondary electron conversion electrodes 33, secondary electrons generated by a first E×B deflector 31 fixed to the surface on the sample side of the secondary electron conversion electrodes 33 via an insulating material is taken in a detector 34. At the same time, deflective chromatic aberrations are suppressed which are generated in the primary charged particle beam at the first E×B deflector 31 by a second E×B deflector 32 fixed to the first E×B deflector 31, and the observation image of high resolution and high contrast without shading is acquired. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008135343(A) 申请公布日期 2008.06.12
申请号 JP20060322204 申请日期 2006.11.29
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 SHOJO TOMOYASU;FUKUDA MUNEYUKI;SUZUKI NAOMASA
分类号 H01J37/28;H01J37/05;H01J37/153 主分类号 H01J37/28
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