LOW DEFECT SI:C LAYER WITH RETROGRADE CARBON PROFILE
摘要
Formation of carbon-substituted single crystal silicon layer is prone to generation of large number of defects especially at high carbon concentration. The present invention provides structures and methods for providing low defect carbon-substituted single crystal silicon layer even for high concentration of carbon in the silicon. According to the present invention, the active retrograde profile in the carbon implantation reduces the defect density in the carbon-substituted single crystal silicon layer obtained after a solid phase epitaxy. This enables the formation of semiconductor structures with compressive stress and low defect density. When applied to semiconductor transistors, the present invention enables Ntype field effect transistors with enhanced electron mobility through the tensile stress that is present into the channel.
申请公布号
WO2008070272(A1)
申请公布日期
2008.06.12
申请号
WO2007US80908
申请日期
2007.10.10
申请人
INTERNATIONAL BUSINESS MACHINE CORPORATION;LIU, YAOCHENG;IYER, SUBRAMANIAN;LI, JINGHONG