| 摘要 |
<p>A solid-state imaging device, a method of making the same, and an imaging apparatus are provided to improve the sensitivity of a photoelectric conversion part to long-wavelength light components. A photoelectric conversion part(21) is formed in a semiconductor layer(11) having a first surface, through which light enters the photoelectric conversion part. A signal circuit part is formed in a second surface of the semiconductor layer opposite to the first surface, and the signal circuit part processes the signal charge obtained by photoelectric conversion of the photoelectric conversion part. A reflective layer(43) is formed on the second surface of the semiconductor layer opposite to the first surface to reflect the light transmitted through the photoelectric conversion part back thereto. The reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer.</p> |
