ORGANOSILANE COMPOUNDS FOR MODIFYING DIELECTRIC PROPERTY OF SILICON OXIDE FILM AND SILICON NITRIDE FILM

摘要

PROBLEM TO BE SOLVED: To reduce cost and also improve safety in a film depositing process. SOLUTION: The present invention discloses a process of depositing a carbon-containing silicon oxide film, or a carbon-containing silicon nitride film having an enhanced etch resistance. The process includes using a silicon-containing precursor, a carbon-containing precursor and a chemical modifier. The present invention also discloses a process of depositing a silicon oxide film, or silicon nitride film having an enhanced etch resistance, the process including using an organosilane precursor and a chemical modifier. COPYRIGHT: (C)2008,JPO&INPIT