Semiconductor device comprising a doped metal comprising main electrode

摘要

A semiconductor device is provided comprising a main electrode ( 4 ) and a dielectric ( 3 ) in contact with the main electrode ( 4 ), the main electrode ( 4 ) comprising a material having a work function and a work function modulating element ( 6 ) for modulating the work function of the material of the main electrode ( 4 ) towards a predetermined value. The main electrode ( 4 ) furthermore comprises a diffusion preventing dopant element ( 5 ) for preventing diffusion of the work function modulating element ( 6 ) towards and/or into the dielectric ( 3 ). Methods for forming such a semiconductor device are also described.