| 摘要 |
<p>A method for fabricating semiconductor components (10) with through interconnects (11) includes the step of providing a semiconductor substrate (14) having a circuit side (22), a back side (24), a plurality of integrated circuits (18) on the circuit side (22), and a plurality of substrate contacts (26) on the circuit side (22) in electrical communication with the integrated circuits (18). The method also includes the steps of forming vias (44) from the back side (24) to the substrate contacts (26), forming a conductive layer (50) in the vias (44) and on the back side (24) in electrical contact with the substrate contacts (26); and forming the conductive layer (50) on the back side (24) into a plurality of redistribution conductors (12) in electrical communication with the substrate contacts (26). The semiconductor component (10) includes the semiconductor substrate (14), the through interconnects (11) and the redistribution conductors (12). Each through interconnect (11) includes a via (44) aligned with a substrate contact (26), and a conductive layer (50) at least partially lining the via (44) in physical and electrical contact with the substrate contact (26). Each redistribution conductor (12) is formed by a portion of the conductive layer (50).</p> |
