TERMINATION DESIGN FOR DEEP SOURCE ELECTRODE MOSFET
摘要
A power semiconductor device that includes a plurality of source trenches that extend to a depth below the gate electrodes and a termination region that includes a termination trench that is as deep as the source trenches.
申请公布号
WO2008021204(B1)
申请公布日期
2008.06.12
申请号
WO2007US17744
申请日期
2007.08.09
申请人
INTERNATIONAL RECTIFIER CORPORATION;CAO, JIANJUN;HENSON, TIMOTHY
