| 摘要 |
<P>PROBLEM TO BE SOLVED: To avoid various problems resulting from using a mask layer and simply a manufacturing process. <P>SOLUTION: As shown in Fig. (a), a substrate 1 having a growth plane having a recess-projection surface is used. When vapor phase growth is performed using this substrate, the recess-projection shape suppresses growth in the lateral direction and promotes growth in the C axis direction, thereby affording a base surface capable of forming a facet plane. Thus, as shown in Fig. (b), a crystal where facet plane is grown is grown in a projection, and a crystal is also grown in a recess. When the crystal growth is continued, the films grown from the projection and the recess are joined in time to cover a recess-projection surface and become flat as shown in Fig. (c). In this case, an area having a low a dislocation density is formed in the upper part of the projection where facet plane is formed, and the prepared film has high quality. <P>COPYRIGHT: (C)2008,JPO&INPIT |
