| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material having high resolution in an ArF lithography technique and capable of giving a pattern with small line edge roughness and high rectangularity, and a pattern forming method therefor. <P>SOLUTION: The positive resist material contains a resin component (A) which is made soluble in an alkali developer by the action of an acid and a compound (B) which generates an acid in response to an actinic ray or radiation, wherein the resin component (A) is a high molecular compound having a repeating unit of formula (1) (wherein R<SP>1</SP>is H, CH<SB>3</SB>or CF<SB>3</SB>; R<SP>2</SP>is a monovalent hydrocarbon group which may contain a hetero atom; m and n are 1 or 2; p is 0, 1 or 2; q is 0 or 1; a, b, c and d are 0.01 to <1, and a+b+c+d=1), and the compound (B) which generates an acid is a sulfonium salt compound. <P>COPYRIGHT: (C)2008,JPO&INPIT |
