| 摘要 |
A light emitting diode is disclosed that is formed in the Group III nitride material system. The diode includes respective n-type and p-type layers for current injection and light emission. At least one n-type Group III nitride layer in the diode has dopants selected from the group consisting of elements with a larger atomic radius than silicon and elements with a larger covalent radius than silicon, with germanium and tellurium being exemplary.
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