摘要 |
A semiconductor device includes low concentration source/drain regions and high concentration source/drain regions each being formed in a semiconductor substrate, a gate insulation film formed on part of the semiconductor substrate located between the low concentration source/drain regions when viewed from the top and a gate electrode formed of metal silicide on the gate insulation film. A gate length of upper part of the gate electrode is larger than a gate length of other part of the gate electrode.
|