| 摘要 |
A plasma processing apparatus generates plasma of a processing gas in a processing chamber and performs plasma processing on a substrate. The plasma processing apparatus is provided with a gas through plate between a plasma generating region which corresponds to the substrate on the susceptor and an external region of such region. The through hole forming region is provided with a first region which corresponds to a center portion of the substrate; a second region arranged on an outer circumference of the first region; and a third region which is arranged on an outer circumference of the second region and includes an external region of the substrate. The diameter of a through hole in the first region is the smallest, and that of a through hole in the third region is the largest.
|
