EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer manufacturing method for manufacturing a light emitting element (e.g., a red LED) with high luminance by reducing carbon mixture being one main cause of luminance deterioration.

SOLUTION: The epitaxial wafer manufacturing method is the method for successively growing an epitaxial layer, including an active layer and a clad layer, on a substrate by an liquid phase epitaxial growth method. Time for holding at the highest achieving temperature is made to be 1.25-2 hr in order to allow the amount of carbon to be taken into the epitaxial layer to be within the range of 3 to 6×1017atoms/cc when the epitaxial layer is made to grow. After that, the temperature is made to fall, and the epitaxial layer grows during the falling of the temperature.

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