METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, with which resistance of a copper film (copper wiring) embedded in a wiring groove can be reduced, and to provide the semiconductor device. SOLUTION: The wiring groove 2 is formed on a surface of an insulating film 1, and an alloy film 3 formed of alloy of Cu and Mn is covered onto a surface of the insulating film 1 comprising an inner face of the wiring groove 2. A Cu film 4 is laminated on the alloy film 3 (insulating film 1) so that the Cu film 4 fills the wiring groove 2 after covering of the alloy film 3. First heat treatment is performed and a barrier film 5 formed of MnxSiyOz(x, y and z: number larger than zero) is formed on a boundary of the alloy film 3 and the insulating film 1. Unnecessary parts outside the wiring groove 2 of the Cu film 4 and the barrier film 5 are removed. Then, second heat treatment is performed. Mn is deposited on the wiring groove 2 by heat treatment. Then, Mn deposited on the wiring groove 2 is removed. COPYRIGHT: (C)2008,JPO&INPIT