SEMICONDUCTOR DEVICE MANUFACTURING BASE MATERIAL AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE USING IT

摘要

PROBLEM TO BE SOLVED: To prevent the warp of a substrate by a stress relaxing pattern, and to suppress the outflow of a cooling gas through the stress relaxing pattern as required without the problem of the lowering of the strength of a stress relaxing pattern substrate. SOLUTION: The object is attained by at least one of a discontinuity from the innermost side in the peripheral region 4b of a mask layer 2 to the place of the outer periphery of the substrate 1 of a stress relaxing pattern 3 and a regulation defining that an etching depth H2 in an etching working to the substrate 1 is less than a normal etching depth H1 by a working pattern 4 while the internal stress of the mask layer 2 is relaxed sufficiently by the stress relaxing pattern 3 formed to the peripheral region 4b of the mask layer 2 to prevent the warp of the substrate 1. COPYRIGHT: (C)2008,JPO&INPIT