| 摘要 |
PROBLEM TO BE SOLVED: To prevent cavities from being generated around a part of a semiconductor thin-film corresponding to a gate electrode in a thin-film transistor panel equipped with a thin-film transistor provided with a semiconductor thin-film formed of intrinsic zinc oxide that is liable to be etched. SOLUTION: A source electrode 2 and a drain electrode 3 are formed on the top surface of a glass substrate 1, and two ohmic contact layers 4 and 5 formed of ITO are provided on the top surfaces of the electrodes 2 and 3. A semiconductor thin-film 6, which is equipped with a contact hole 13 for connecting a pixel electrode 11 to the source electrode 2 and formed of intrinsic zinc oxide, is formed on the top surface of the glass substrate 1 containing the source electrode 2, the drain electrode 3, and the two ohmic contact layers 4 and 5. In this case, the semiconductor thin-film 6 is formed on all the region under the gate electrode 8 and its surroundings, so that cavities are prevented from being generated around a part of the semiconductor thin-film 6 corresponding to the gate electrode 8. COPYRIGHT: (C)2008,JPO&INPIT
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