发明名称 SUBSTRATE HEATING APPARATUS AND SEMICONDUCTOR FABRICATION METHOD
摘要 A substrate heating apparatus and a semiconductor manufacturing method are provided to improve exhaust conductance around a substrate by forming a through-hole for connecting a space between a cap and the substrate with a space in a process chamber. A heating member(4) heats a substrate(3) positioned in a process chamber(1). A susceptor(2) is interposed between the heating member and the substrate. A heat receiving member is installed opposite to the susceptor to receive the heat generated by the heating member through the susceptor. A space between the heat receiving member and the substrate is communicated with a space(13b) in the process chamber via a ventilation portion.
申请公布号 KR20080053212(A) 申请公布日期 2008.06.12
申请号 KR20070126571 申请日期 2007.12.07
申请人 CANON ANELVA CORPORATION 发明人 SHIBAGAKI MASAMI;NUMAJIRI KENJI;EGAMI AKIHIRO;KUMAGAI AKIRA;AKIYAMA SUSUMU
分类号 H01L21/324 主分类号 H01L21/324
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