发明名称 |
SUBSTRATE HEATING APPARATUS AND SEMICONDUCTOR FABRICATION METHOD |
摘要 |
A substrate heating apparatus and a semiconductor manufacturing method are provided to improve exhaust conductance around a substrate by forming a through-hole for connecting a space between a cap and the substrate with a space in a process chamber. A heating member(4) heats a substrate(3) positioned in a process chamber(1). A susceptor(2) is interposed between the heating member and the substrate. A heat receiving member is installed opposite to the susceptor to receive the heat generated by the heating member through the susceptor. A space between the heat receiving member and the substrate is communicated with a space(13b) in the process chamber via a ventilation portion.
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申请公布号 |
KR20080053212(A) |
申请公布日期 |
2008.06.12 |
申请号 |
KR20070126571 |
申请日期 |
2007.12.07 |
申请人 |
CANON ANELVA CORPORATION |
发明人 |
SHIBAGAKI MASAMI;NUMAJIRI KENJI;EGAMI AKIHIRO;KUMAGAI AKIRA;AKIYAMA SUSUMU |
分类号 |
H01L21/324 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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